منابع مشابه
Metallization strategies for In2O3-based amorphous oxide semiconductor materials
Amorphous oxide semiconductors based on indium oxide [e.g., In–Zn–O (IZO) and In–Ga–Zn–O (IGZO)] are of interest for use in thin-film transistor (TFT) applications. We report that the stability of amorphous In–Zn–O (a-IZO) used in TFT applications depends, in part, on the metallization materials used to form the source and drain contacts. A thermodynamics-based approach to the selection of IZO ...
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ژورنال
عنوان ژورنال: CORROSION ENGINEERING
سال: 1986
ISSN: 0010-9355,1884-1155
DOI: 10.3323/jcorr1974.35.11_656